TM DSG SiNT MOSFET with a inner gate and outer gate are shown with

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Device structure for 10 nm DG In0.53Ga0.47As NMOSFET with SiO2 +

Modelled and experimental Hall voltage response in vertical Hall

Effect of 3 nm gate length scaling in junctionless double

I On /I Off ratio comparison of this work with literature

Anil VOHRA, Professor (Full), M.Sc., Ph.D

I On /I Off ratio comparison of this work with literature

Schematic of the real-space representation of an electron device