Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D3TC02880A

Effect of the electron mobility of the top semiconductor electrode on

PDF) Verification of Charge Transfer in Metal-Insulator-Oxide Semiconductor Diodes via Defect Engineering of Insulator

Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors

Temperature dependence of the vertical current in the MIOS structure.

Control over electrically bistable properties of layer-by-layer-assembled polymer/organometal multilayers

Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory. - Abstract - Europe PMC

Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors

High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D2TC03751C

Figure 3 from Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric